Robust SiN x /GaN MIS-HEMTs With Crystalline Interfacial Layer Using Hollow Cathode PEALD

In this letter, we report gallium nitride-based metal-insulator-semiconductor high-electron-mobility transistors (GaN MIS-HEMTs) with a 16-nm-thick silicon nitride (SiNx) gate insulator and surface passivation layer grown using low-temperature (300 °C) hollow cathode plasma-enhanced atomic layer deposition. Tris(dimethylamino) silane and a remote N2 plasma were used as the silicon precursor and th...