Effect of oxygen partial pressure on the semiconducting properties of thermally grown chromia on pure chromium
Corrosion Science(2018)
摘要
•Pure Cr has been oxidized in order to grow insulating chromia.•Buffers have been fabricated to vary the p(O2) without changing the temperature.•A chromia semiconducting properties diagram is proposed versus oxygen activity.•The stoichiometric chromia layer appears to be more protective.
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关键词
Photoelectrochemistry,TEM,Chromia,High temperature oxidation
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