Efficient Analysis Of Esd Noise Coupling To Mobile Device Memory Module

2018 JOINT IEEE INTERNATIONAL SYMPOSIUM ON ELECTROMAGNETIC COMPATIBILITY AND 2018 IEEE ASIA-PACIFIC SYMPOSIUM ON ELECTROMAGNETIC COMPATIBILITY (EMC/APEMC)(2018)

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摘要
This study presents an efficient way for the estimation of the induced electrostatic discharge (ESD) noise to mobile device memory modules in circuit simulation environment. The induced noise due to ESD event at the commercial laptop dynamic random-access memory (DRAM) modules is calculated using the coupling transfer impedance function in SPICE type circuit simulator. Coupling transfer function is derived from the measured S-parameters using proposed novel method. The comparison of measured and circuit simulated results using coupling transfer impedance function shows very good agreement.
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关键词
Electrostatic Discharge (ESD),IEC 61000-4-2,Coupling Transfer Function,S-Parameters
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