Impact of copper on light-induced degradation in Czochralski silicon PERC solar cells
Solar Energy Materials and Solar Cells(2018)
摘要
Both multicrystalline and Czochralski (Cz) silicon substrates are known to suffer from various mechanisms of light-induced degradation (LID), including copper-related LID (Cu-LID). Past studies on Cu-LID have mostly been performed on unprocessed wafers, omitting the impact of the solar cell process on the copper distribution. Here, we carefully contaminate Cz-substrates of different quality with different amounts of copper and process the substrates into complete industrial Cz-Si PERC solar cells, reaching a comprehensive mapping of the impact of Cu-LID for the PV industry. The results show that both the copper contamination level and Cz crystal quality are critical factors affecting the extent of Cu-LID. Most importantly, we show that copper can result in significant concentrations in the bulk of the finished PERC cells after being exposed to only trace surface contamination. Consequently, even a small local copper contamination area (~ 3–4 cm2) is sufficient to induce strong LID in the full-sized (156 × 156 mm2) cell parameters, resulting e.g. in ~7% relative efficiency loss during light soaking. The corresponding short circuit current density decreases by up to a factor of two in the contaminated areas.
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关键词
Copper,Light-induced degradation,PERC,Czochralski silicon,Cell efficiency,LID imaging
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