Low-temperature deposition of polycrystalline germanium on silicon by magnetron sputtering

A new method is reported to grow polycrystalline germanium (Ge) on silicon (Si) at low temperatures by direct current magnetron sputtering. The method is based on first sputtering a nanometre scale thickness Si layer on a Si substrate, followed by sputtering a Ge layer of the desired thickness. Using this approach, polycrystalline Ge has been deposited on Si substrate at 300°C, the lowest reported...