Potential and Limitations of HfZrO 2 -based Ferroelectric MOSFET For Low Power Applications

The potential and limitations of HfZrO 2 -based ferroelectric MOSFETs (FeFETs) are quantitatively evaluated based on BSIM4 and Landau-Khalatnikov equation. For reliable prediction of dynamic characteristics, the recently reported damping constant ξ_{FE}}=10 Ωċ m} of HfZrO 2 is used. Due to negative capacitance (NC) effect in ferroelectric HfZrO 2 , current amplification is achieved in transfer and output characteristics. Circuit simulation of a three-stage oscillator and inverter chain shows that it is very challenging to operate FeFETs beyond the frequency of 100 MHz due to the large value of xi_{FE}}. Compared with MOSFETs, reduction in power consumption has very similar magnitude to reduction in supply voltage. Our results explicitly show that HfZrO 2 -based FeFETs can be used for the future low frequency and low power applications.