Resistive Switching Characteristics and Reliability of SiN x -Based Conductive Bridge Random Access Memory

Chun-An Lin, Guang-Jyun Dai,Tseung-Yuen Tseng

IEEE Transactions on Electron Devices（2018）

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摘要

The switching properties of Te and TeTiW top electrodes (TEs) on TiW/SiN/TiN resistive switching memory devices are explored in this paper. The TeTiW TE device exhibits more favorable bipolar resistive switching behavior because of the decrease in binding energy after its use. This finding is confirmed through X-ray photoelectron spectroscopy analyses. The filament of the TeTiW TE device is metal ...

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关键词

Switches,Stress,Metals,Resistance,Random access memory,Electrodes,Ions

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