Variability Study of MWCNT Local Interconnects Considering Defects and Contact Resistances--Part II: Impact of Charge Transfer Doping

Rongmei Chen,Jie Liang,Jaehyun Lee,Vihar P. Georgiev,Raphael Ramos,Hanako Okuno,Dipankar Kalita,Yuanqing Cheng,Liuyang Zhang,R. R. Pandey,Salvatore Maria Amoroso,Campbell Millar,Asen Asenov,Jean Dijon,Aida Todri-Sanial

IEEE Transactions on Electron Devices（2018）

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摘要

In this paper, the impact of charge transfer doping on the variability of multiwalled carbon nanotube (MWCNT) local interconnects is studied by experiments and simulations. We calculate the number of conducting channels of both metallic and semiconducting carbon nanotubes as a function of Fermi level shift due to doping based on the calculation of transmission coefficients. By using the MWCNT comp...

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关键词

Doping,Semiconductor process modeling,Charge transfer,Carbon,Semiconductor device modeling,Mathematical model,Conductivity

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