Development of SiGeSn Technique Towards Integrated Mid-Infrared Photonics Applications
2018 IEEE PHOTONICS SOCIETY SUMMER TOPICAL MEETING SERIES (SUM)(2018)
Abstract
SiGeSn technique has been investigated, ranging from material growth to the device demonstration including lasers and photodetectors. The maximum Sn composition of 22.3% was achieved, while the operation wavelength of devices is up to 3 μm, indicating the great potential applications in integrated mid-infrared photonics.
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Key words
SiGeSn,laser,photodetector,mid-infrared,integrated photonics
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