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Development of SiGeSn Technique Towards Integrated Mid-Infrared Photonics Applications

2018 IEEE PHOTONICS SOCIETY SUMMER TOPICAL MEETING SERIES (SUM)(2018)

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Abstract
SiGeSn technique has been investigated, ranging from material growth to the device demonstration including lasers and photodetectors. The maximum Sn composition of 22.3% was achieved, while the operation wavelength of devices is up to 3 μm, indicating the great potential applications in integrated mid-infrared photonics.
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Key words
SiGeSn,laser,photodetector,mid-infrared,integrated photonics
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