Modular Compact Modeling of MTJ Devices

This paper describes a robust, modular, and physics-based circuit framework to model the conventional and emerging magnetic tunnel junction (MTJ) devices. Magnetization dynamics are described by the stochastic Landau–Lifshitz–Gilbert (sLLG) equation whose results are rigorously benchmarked with a Fokker–Planck equation description of the magnet dynamics. We then show how sLLG is coupled to the transport equations of MTJ-based devices in a unified circuit platform. Step by step, we illustrate how the physics-based MTJ model can be extended to include different spintronics phenomena, including spin-transfer torque, voltage-controlled magnetic anisotropy (VCMA), and spin–orbit torque phenomena by the experimentally benchmarked examples. To demonstrate how our approach can be used in the exploration of novel MTJ-based devices, we present a recently proposed MEMS resonator-driven spin-torque nano-oscillator (STNO) that can reduce the phase noise of STNOs. We briefly elaborate on the use of our framework beyond conventional devices.