High-Performance Germanium Thin-Film Transistors With Single-Crystal-Like Channel via Continuous-Wave Laser Crystallization

This letter reports of the fabrication of high-performance p-channel polycrystalline germanium (poly-Ge) thin-film transistors (TFTs) using continuouswave laser crystallization (CLC). During the CLC process, the direction of crystallization matches the direction of laser scanning due to a strong temperature gradient in the melting region. This makes it possible to fabricate high-quality poly-Ge th...