Radiation tolerance study on irradiated AC-coupled, poly-silicon biased, p-on-n silicon strip sensors developed in India

The silicon sensors to be deployed in the next generation high energy physics experiments for operation in high luminosity scenarios, will require a high level of radiation tolerance. AC-coupled silicon strip sensors integrated with biasing poly-silicon resistors have been fabricated in collaboration with the Bharat Electronics Limited foundry using 4 inch n-type wafers in p-on-n configuration. Several sensors were irradiated with protons at different fluences at the Karlsruhe Cyclotron facility under the Advanced European Infrastructures for Detectors at Accelerators (AIDA) program. This paper reports on these radiation hardness study performed on the AC-coupled silicon sensors fabricated in India. The characterization comprises of electrical tests, including total current, voltage and strip scans and charge collection studies.