Low Pumping Threshold GeSn/SiGeSn Multiple Quatum Well Lasers

Detlev Grützmacher,Denis Rainko,D. Buca,Nils von den Driesch,Z. Ikonić,Daniela Stange,J.M. Hartmann

2018 IEEE 15th International Conference on Group IV Photonics (GFP)（2018）

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摘要

GeSn/SiGeSn multiple quantum well structures have been grown by means of low temperature reactive gas source epitaxy on Ge pseudosubstrates. The MQW structures exhibit type I band alignment. Optically pumped μ-disc laser exhibit a threshold of 40kW/cm ² to obtain optically pumped lasing.

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关键词

Group IV laser,SiGeSn,GeSn,band alignment,μ-disc laser,Si photonics,pumping threshold

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