Wafer-scale silicon for quantum computing

Enrichment of the spin-zero $^{28}$Si isotope drastically reduces spin-bath decoherence in silicon and has enabled solid state spin qubits with extremely long coherence and high control fidelity. The limited availability of isotopically enriched $^{28}$Si in industrially adopted forms, however, is a major bottleneck to leverage CMOS technology for manufacturing qubits with the quality and in the large numbers required for fault tolerant quantum computation. Here we show wafer-scale epitaxial growth of isotopically enriched $^{28}$Si/$^{28}$SiO$_2$ stacks in an industrial CMOS fab, and demonstrate highly uniform films with an isotopic purity greater than $99.92%$. We induce a two dimensional electron gas, the cornerstone of silicon spin qubit architectures, at the isotopically enriched semiconductor/oxide interface by electrical gating. To confirm the high quality growth, we perform electrical probing and show matching properties for fin transistors in $^{28}$Si and natural Si, fabricated using the same high volume manufacturing process. Quantum transport measurements at cryogenic temperature validate wafer-scale $^{28}$Si as a suitable material to host qubits. The establishment of an industrial supply of isotopically enriched Si, previously thought to be a major hurdle, provides the foundation for high volume manufacturing of long-lived spin qubits.