Si nanowire CMOS fabricated with minimal deviation from RMG FinFET technology showing record performance

Isaac Lauer,N. Loubet, S.D. Kim,J.A. Ott, S. Mignot, R. Venigalla,T. Yamashita, T. Standaert, J. Faltermeier, V. Basker, B. Doris, M.A. Guillorn

Symposium on VLSI Technology-Digest of Technical Papers（2015）

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摘要

We demonstrate a process flow for creating gate-all-around (GAA) Si nanowire (SiNW) MOSFETs with minimal deviation from conventional replacement metal gate (RMG) finFET technology as used in high-volume manufacturing. Using this technique, we demonstrate the highest DC performance shown for GAA SiNW MOSFETs at sub-100 nm gate pitch, and functional high-speed ring oscillators.

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关键词

silicon nanowire,CMOS fabrication,RMG FinFET technology,process flow,gate-all-around MOSFET,replacement metal gate finFET technology

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