Predicting LER and LWR in SAQP with 3D virtual fabrication

ADVANCED ETCH TECHNOLOGY FOR NANOPATTERNING V(2016)

引用 1|浏览33
暂无评分
摘要
For the first time, process impact on line-edge roughness (LER) and line-width roughness (LWR) in a back-end-of-line (BEOL) self-aligned quadruple patterning (SAQP) flow has been systematically investigated through predictive 3D virtual fabrication. This frequency dependent LER study shows that both deposition and etching effectively reduce high frequency LER, while deposition is much more effective in reducing low frequency LER. Spacer-assisted patterning technology reduces LWR significantly by creating correlated edges, and further LWR improvement can be achieved by optimizing individual process effects on LER. Our study provides a guideline for the understanding and optimization of LER and LWR in advanced technology nodes.
更多
查看译文
关键词
line edge roughness,line width roughness,self-aligned quadruple patterning,FinFET,Virtual fabrication
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要