Strong modulation of optical properties in rippled 2D GaSe via strain engineering.

Few-layer GaSe is one of the latest additions to the family of two-dimensional semiconducting crystals whose properties under strain are still relatively unexplored. Here, we study rippled nanosheets that exhibit a periodic compressive and tensile strain of up to 5%. The strain profile modifies the local optoelectronic properties of the alternating compressive and tensile regions, which translates into a remarkable shift of the optical absorption band-edge of up to 1.2 eV between crests and valleys. Our experimental observations are supported by theoretical results from density functional theory calculations performed for monolayers and multilayers ( up to seven layers) under tensile and compressive strain. This large band gap tunability can be explained through a combined analysis of the elastic response of Ga atoms to strain and the symmetry of the wave functions.