Power-dependent lateral photovoltaic effect in a-Si:H/c-Si p-i-n structure at different temperatures

In this letter, we report the power-dependent lateral photovoltaic effect (LPE) in a-Si:H/c-Si p-i-n structure at different temperatures for the first time. It was found that the position sensitivities of different temperatures all have the similar tendency, which increases gradually until become saturated with increasing laser power from 0.1mW to 70mW due to the competition between the increase number of generated electron-hole pairs and the increase of recombination probability. Moreover, the LPE of different laser powers all decreased considerably with decreasing temperature from 295K to 80K, and the saturated position sensitivity of 15.31mV/mm at 295K is about 21.26 times as large as that of 80K, which can be ascribed to both the temperature-dependent Schottky barrier (SB) height and indium tin oxide (ITO) layer resistivity.