Nickel silicide for interconnects

Kevin L. Lin,Stephanie A. Bojarski,Colin T. Carver,Manish Chandhok,Jasmeet S. Chawla,James S. Clarke,M. Harmes,Brian Krist, Hazel Lang, Mona Mayeh, Sudipto Naskar,John J. Plombon,Seung Hoon Sung,Hui Jae Yoo

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)（2015）

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摘要

Nickel silicide is an attractive option for interconnects at small dimensions because of its short electron mean free path and good electromigration behavior. Nickel silicide interconnects can be integrated using either a subtractive or damascene process. Precise control of final metal composition ratio is important for obtaining low resistivity, as shown in thin-film and patterned structure measurements.

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关键词

nickel silicide interconnects,small dimensions,short electron mean free path,good electromigration behavior,subtractive process,damascene process,precise control,final metal composition ratio,thin film,patterned structure measurements,NiSi

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