Correlation between 1/f Noise Parameters and Random Telegraph Noise in 28-nm High-k/Metal Gate pMOSFETs with Embedded SiGe Source/DrainS.C. Tsai,S.L. Wu,J.F. Chen,K.S. Tsai, T.H. Kao, C.W. Yang,C.G. Chen, K.Y. Lo, O.B. Cheng,Y.K. Fang,S.J. ChangThe Japan Society of Applied Physics（2013）引用 0|浏览13暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
