Ultra-low power and ultra-low voltage devices and circuits for IoT applications

Toshiro Hiramoto,Ken Takeuchi,Tomoko Mizutani,A. Ueda,T. Saraya,Masaharu Kobayashi,Yoshiki Yamamoto,Hideki Makiyama,Tomohiro Yamashita,Hidekazu Oda,Shiro Kamohara,Nobuyuki Sugii,Yasuo Yamaguchi

2016 IEEE Silicon Nanoelectronics Workshop (SNW)（2016）

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摘要

This paper reports new device trends of ultra-low power, ultra-low leakage, and ultra-low voltage for IoT applications. The SOTB technology achieves subthreshold leakage as low as 0.2pA/μm. Some device/circuit tricks for non-volatility and ultra-low voltage operation are reviewed.

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关键词

ultra-low power devices and circuits,ultra-low voltage devices and circuits,IoT applications,subthreshold leakage

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