Angular Effects of Heavy-Ion Strikes on Single-Event Upset Response of Flip-Flop Designs in 16-nm Bulk FinFET Technology
IEEE Transactions on Nuclear Science(2017)
摘要
Radiation particles are incident on an integrated circuit (IC) from all angles. For planar technologies, angular incidence increases the deposited charge in a given volume, resulting in higher collected charge at a node and more transistors collecting charge due to increased charge sharing. For FinFET technologies, the physical structure of a FinFET is very different from that of a planar transist...
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关键词
FinFETs,Ions,Silicon,Three-dimensional displays,Insulation life,Degradation
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