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Angular Effects of Heavy-Ion Strikes on Single-Event Upset Response of Flip-Flop Designs in 16-nm Bulk FinFET Technology

IEEE Transactions on Nuclear Science(2017)

引用 27|浏览34
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摘要
Radiation particles are incident on an integrated circuit (IC) from all angles. For planar technologies, angular incidence increases the deposited charge in a given volume, resulting in higher collected charge at a node and more transistors collecting charge due to increased charge sharing. For FinFET technologies, the physical structure of a FinFET is very different from that of a planar transist...
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关键词
FinFETs,Ions,Silicon,Three-dimensional displays,Insulation life,Degradation
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