Performance benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6 and Ge/Ge0.93Sn0.07 hetero-junction tunnel FETs

We experimentally demonstrate and benchmark the performance of p-channel TFETs (PTFETs) comparing Group III-V (In _0.65 Ga _0.35 As/GaAs _0.4 SW _0.6 ) against Group IV (Ge/Ge _0.93 Sn _0.07 ) semiconductor hetero-junctions. This is enabled via gate stack engineering with extremely scaled dielectrics achieving the highest accumulation capacitance density (≥3μF/cm ² ) on both GaAs _0.4 Sb _0.6 and Ge _0.88 Sn _0.12 channels, respectively. Temperature and electric field dependent I-V measurements coupled with first-principles density functional theory (DFT) based band-structure calculations and analytical modeling based on modified Shockley-Read-Hall formalism, are used to quantify contributions to carrier transport from band-to-band tunneling and trap-assisted tunneling (TAT). GeSn based PTFETs are found to outperform In _0.65 Ga _0.35 As/GaAs _0.4 Sb _0.6 PTFETs benefiting from band-gap engineering (higher I _on ) and reduced phonon assisted TAT current (lower D _it ).