InGaN-based flexible light emitting diodes

Proceedings of SPIE, 2017.

Cited by: 0|Bibtex|Views0|DOI:https://doi.org/10.1117/12.2251618
Other Links: academic.microsoft.com

Abstract:

Novel layer release and transfer technology of single-crystalline GaN semiconductors is attractive for enabling many novel applications including flexible photonics and hybrid device integration. To date, light emitting diode (LED) research has been primarily focused on rigid devices due to the thick growth substrate. This prevented funda...More

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