Solution-based formation of high quality Al 2 O 3 gate dielectrics on graphene using microwave-assisted annealingKwan-Soo Kim,Goon-Ho Park,Hirokazu Fukidome,Tetsuya Suemitsu,Taiichi Otsuji,Maki SuemitsuThe Japan Society of Applied Physics(2016)引用 23|浏览8暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要