MID-Infrared Light Emitting Diode Based on InGaAsSb/AlGaAsSb Quantum Well for Gas Sensor Applications

In this study, we present the device performance of dual color infrared light emitting diode (IR–LED) based on InGaAsSb/AlGaAsSb quantum well structure. The LED sample was grown on n–type GaSb substrate using the molecular beam (MBE) with As2 and Sb2 cracker cells. The active layer of device structure consists of three different quantum well widths (5, 10 and 15 nm) of InGaAsSb and a 200 nm thick Al0.35Ga0.65As0.03Sb0.97 barrier. The structural and electrical characterization of LED sample was measured by high–resolution X–ray diffractometer (HR–XRD) and current–voltages (I–V). The LED sample was processed by the conventional photolithographic technique. By using the e–beam evaporation system, ohmic contact was formed on the p– and n–type of the layer. The electroluminescence (EL) of the device was observed 1.94 and 2.1μm at room temperature.