Silicon carbide for high-power applications at MM and THz ranges

The dielectric loss and refractive index in the monocrystal silicon carbide of the polytype 6H–SiC were studied in the 6–380GHz frequency range and the 300–850 K temperature interval using high-quality resonator techniques. At low frequencies (f<10GHz), the loss tangent varies as 1/f. At high frequencies (f>50GHz), the loss increases with frequency. The loss nature in wide frequency and temperature ranges is considered. The possibility to apply silicon carbide for production of high-power windows is investigated.