Efficient spin transport along Si $\langle$100$\rangle$ at room temperature

We find efficient spin transport in Si at room temperature in lateral spin valves (LSVs). When the crystal orientation of the spin-transport channel in LSVs is changed from $langle$110$rangle$, which is a conventional cleavage direction, to $langle$100$rangle$, the maximum magnitude of the spin signals is enhanced approximately by a factor of 2. From the analyses based on the one-dimensional spin diffusion model, we can understand that the spin injection/detection efficiency in Si $langle$100$rangle$ LSVs is larger than that in Si$langle$110$rangle$ ones. We infer that, in Si-based LSVs, the spin detection efficiency of the pure spin current depends largely on the valley structures of the conduction band in Si.