Ultra-low Loss Arrayed Waveguide Grating Using Deep UV Lithography on a Generic InP Photonic Integration Platform

43RD EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION (ECOC 2017)(2017)

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摘要
ArF deep UV (193 nm) lithography was successfully applied to fabricate Arrayed Waveguide Gratings in generic Indium Phosphide technology. The sub-dB transmission losses demonstrate the advantages of scaling down the minimum feature size to 100 nm.
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关键词
generic InP photonic integration platform,ArF deep UV lithography,generic Indium Phosphide technology,ultralow loss arrayed waveguide grating,Deep UV Lithography,subdB transmission losses,size 100.0 nm,wavelength 193.0 nm,InP
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