Deep UV lithography process in generic InP integration for arrayed waveguide gratings

IEEE Photonics Technology Letters(2018)

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摘要
Low-excess-loss arrayed waveguide gratings are enabled by unique application of deep UV lithography in InP integrated photonics through reduced feature sizes and, more specifically, well-resolved inter-waveguide gap dimensions. Submicrometer wafer-flatness is shown to be required to achieve the critical dimension uniformity better than 10 nm on 3-in substrates. Arrayed waveguide grating devices we...
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关键词
Indium phosphide,III-V semiconductor materials,Arrayed waveguide gratings,Lithography,Substrates,Waveguide discontinuities
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