Scaled Submicron Field-Plated Enhancement Mode High-K Gallium Nitride Transistors on 300mm Si(111) Wafer with Power FoM (R_ON xQ_GG) of 3.1 mohm-nC at 40V and f_T/f_MAX of 130/680GHz

Han Wui Then, M. Radosavljevic, P. Koirala, M. Beumer, S. Bader, A. Zubair, T. Hoff, R. Jordan, T. Michaelos, J. Peck, I. Ban,N. Nair, H. Vora, K. Joshi, I. Meric, A. Oni, N. Desai, H. Krishnamurthy, K. Ravichandran,J. Yu, S. Beach, D. Frolov, A. Hubert, A. Latorre-Rey, S. Rami, J. Rangaswamy, Q. Yu, P. Fischer

2022 International Electron Devices Meeting (IEDM)（2022）

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Scaled Submicron Field-Plated Enhancement Mode High-K Gallium Nitride Transistors on 300mm Si(111) Wafer with Power FoM (RON xQGG) of 3.1 mohm-nC at 40V and fT/fMAX of 130/680GHz

Scaled Submicron Field-Plated Enhancement Mode High-K Gallium Nitride Transistors on 300mm Si(111) Wafer with Power FoM (R_ON xQ_GG) of 3.1 mohm-nC at 40V and f_T/f_MAX of 130/680GHz