Antifuse OTP Cell in a Cross-Point Array by Advanced CMOS FinFET Process
IEEE Transactions on Electron Devices(2019)
摘要
A new antifuse one-time programmable (OTP) memory array by the 16-nm FinFET high-
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metal gate process is proposed and demonstrated. The OTP cells are programed by gate dielectric breakdown. The asymmetric
${I}$
–
${V}$
characteristics can be achieved by controlling the current compliance level during its programing operation. Based on the diode-like postbreakdown
${I}$
–
${V}$
characteristics, a high-density cross-point array without cell selectors is demonstrated, by the advanced FinFET CMOS technology.
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关键词
Logic gates,Dielectrics,FinFETs,Electric breakdown,Metals,CMOS technology,Arrays
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