Effects of annealing process and the additive on the electrical properties of chemical solution deposition derived 0.65Pb(Mg 1/3 Nb 2/3 )O 3 –0.35PbTiO 3 thin films

0.65Pb(Mg 1/3 Nb 2/3 )O 3 –0.35PbTiO 3 (PMN–PT) thin films were deposited on (111)Pt/Ti/SiO 2 /Si substrates via the chemical solution deposition. Both of the annealing process and additive methanamide play an obvious part in the structure and electrical properties of PMN–PT films. The optimized high-qualitied PMN–PT thin film in present work is fabricated with the methanamide in the precursor and annealed at 650 °C for 20 min. The film exhibits pure perovskite phase and superior ferroelectricity. The saturation polarization P s and remanent polarization P r are 52.1 µC/cm 2 and 18.7 µC/cm 2 at 500 kV/cm with 1000 Hz. It also shows low leakage current density of approximately 1.0 × 10 − 8 A/cm 2 at 200 kV/cm.