InAs FinFETs With $ extrm {H}_{mathrm {fin}}=20$ nm Fabricated Using a Top–Down Etch Process

We report the first demonstration of InAs FinFETs with fin width Wfin in the range 25-35 nm, formed by inductively coupled plasma etching. The channel comprises defect-free, lattice-matched InAs with fin height Hfin = 20 nm controlled by the use of an etch stop layer incorporated into the device heterostructure. For a gate length Lg = 1 μm, peak transconductance gm,peak = 1430 μS/μm is measured at...