Review—Dopant Selection Considerations and Equilibrium Thermal Processing Limits for n+-In0.53Ga0.47As
ECS Journal of Solid State Science and Technology, 2016.
An overview of various processing and dopant considerations for the creation of heavily-doped n-InGaAs is presented. A large body of experimental evidence and theoretical prediction point to dopant vacancy-complexing as the limiting mechanism for electrical activation in heavily Si doped InGaAs and GaAs. Dopant incorporation techniques wh...More
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