Review-Dopant Selection Considerations And Equilibrium Thermal Processing Limits For N(+)-In(0.)53ga(0.47)As

An overview of various processing and dopant considerations for the creation of heavily-doped n-InGaAs is presented. A large body of experimental evidence and theoretical prediction point to dopant vacancy-complexing as the limiting mechanism for electrical activation in heavily Si doped InGaAs and GaAs. Dopant incorporation techniques which require thermal treatment steps to move dopants onto lattice sites like ion implantation and monolayer doping exhibit stable activation up to a limit of approximate to 1.5 x 10(19) cm(-3). Growth-based dopant incorporation methods have shown much higher (5 x 10(19) cm(-3)) active concentrations but these activate concentrations are shown in multiple studies to be metastable. Other device specific process-flow constraints with respect to modern CMOS devices which may make some means of dopant incorporation method, or species selection more appropriate for a given application are also discussed. (C) The Author(s) 2016. Published by ECS. All rights reserved.