InAs nanowire GAA n-MOSFETs with 12–15 nm diameter

T. Vasen,P. Ramvall,A. Afzalian,C. Thelander,K.A. Dick,M. Holland,G. Doornbos, S.W. Wang,R. Oxland,G. Vellianitis,M.J.H. van Dal,B. Duriez, J.-R. Ramirez,R. Droopad,L.-E. Wernersson,L. Samuelson,T.-K. Chen,Y.-C. Yeo,M. Passlack

2016 IEEE Symposium on VLSI Technology（2016）

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摘要

InAs nanowires (NW) grown by MOCVD with diameter d as small as 10 nm and gate-all-around (GAA) MOSFETs with d = 12-15 nm are demonstrated. I _on = 314 μA/μm, and S _sat =68 mV/dec was achieved at V _dd = 0.5 V (I _off = 0.1 μA/μm). Highest g _m measured is 2693 μS/μm. Device performance is enabled by small diameter and optimized high-k/InAs gate stack process. Device performance tradeoffs between g _m , R _on , and I _min are discussed.

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关键词

nanowire GAA n-MOSFETs,MOCVD,gate-all-around MOSFETs,device performance,optimized high-k gate stack process,size 12 nm to 15 nm,voltage 0.5 V,InAs

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