Direct three-dimensional observation of the conduction in poly-Si and In1−xGaxAs 3D NAND vertical channels

U. Celano,E. Capogreco,J.G. Lisoni,A. Arreghini,B. Kunert,W. Guo,G. Van den Bosch,J. Van Houdt,K. De Meyer,A. Furnemont, W. Vandervorst

2016 IEEE Symposium on VLSI Technology（2016）

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摘要

Nanoscopic details of the conduction in 3D NAND vertical channels are unraveled by a novel slice-and-view tomographic technique, Scalpel SPM. The structural and electrical properties of poly-Si and single crystalline In 1−x Ga x As of 45 nm channel diameters are explored/revealed. The impact of the grain boundaries (GBs) in poly-Si and of the material segregation in In 1−x Ga x As are shown, thus providing a direct correlation between the channel materials and the electrical performance of the device.

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关键词

direct three-dimensional observation,3D NAND vertical channels,slice-and-view tomographic technique,structural properties,electrical properties,channel materials,InGaAs

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