A D-band 4×4 PA array with 39dBm EIRP using 0.13-µm SiGe BiCMOS

A 4×4 power amplifier (PA) array with end-fire on chip antennas is presented in this paper. In the PA array module, four-chips are stacked vertically and spaced by the metal holders. In a single chip, four PA blocks with a 1×4 end-fire on-chip antenna are integrated. 0.13-µm SiGe BiCMOS process is used for fabrication with the experimental ƒ T and ƒ MAX of 210 and 260 GHz, respectively. The 4×4-PA-array module achieves a measured maximal effective isotropic radiated power (EIRP) of 39 dBm at 135GHz. The whole module has the physical dimensions of 24×35×24 mm ³ and it consumes 19 W from a 6.5 V DC supply. This module can easily be scaled to any M×N array and hence, further improve the EIRP.