Cycling-Induced Charge Trapping/Detrapping in Flash Memories—Part I: Experimental Evidence

By using our 16-nm NAND Flash technology as a test vehicle, in this paper, we summarize all the experimental evidence that we have gathered so far on the phenomenology of cycling-induced charge trapping/detrapping in Flash memories. In particular, results from experiments conceived to explore the dependence of charge detrapping on cell memory state reveal that the phenomenon involves more than the...