Cycling-Induced Charge Trapping/Detrapping in Flash Memories—Part II: Modeling

IEEE Transactions on Electron Devices(2016)

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摘要
Starting from all the experimental evidence we presented in Part I of this work (Resnati et al., 2016), in this paper, we propose a new microscopic picture for cycling-induced charge trapping/detrapping in Flash memories. This picture involves structural relaxation of the charged tunnel-oxide defects as limiting step in the detrapping process, triggering the possibility for defects to exchange car...
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关键词
Electron traps,Flash memories,Electron microscopy,Temperature dependence,Semiconductor device modeling,Semiconductor device reliability
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