256×256, 100kfps, 61% Fill-factor time-resolved SPAD image sensor for microscopy applications

Istvan Gyongy,Neil Calder,Amy Davies,Neale Dutton,Paul A. Dalgarno,Rory R Duncan,Colin Rickman,Robert Henderson

2016 IEEE International Electron Devices Meeting (IEDM)（2016）

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摘要

A 256×256 Single Photon Avalanche Diode (SPAD) image sensor operating at 100kfps with fill factor of 61% and pixel pitch of 16μm is reported. An all-NMOS 7T pixel allows high uniformity gated operation down to 4ns and ~600ps fall time with on-chip delay generation. The sensor operates with 0.996 temporal aperture ratio (TAR) in rolling shutter and has a parasitic light sensitivity (PLS) in excess of -160dB when operated in global shutter. Gating and cooling allow the suppression of dark noise, which, in combination with the high fill factor, enables competitive low-light performance with electron multiplying CCDs (EMCCDs) whilst offering time-resolved imaging modes.

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关键词

single photon avalanche diode image sensor,SPAD image sensor,microscopy applications,all-NMOS 7T pixel,on-chip delay generation,temporal aperture ratio,TAR,rolling shutter,parasitic light sensitivity,PLS,dark noise suppression,electron multiplying CCD,EMCCD

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