Pbs Colloidal Quantum Dot Near Infrared Photoconductors: Dc And Noise Characterization

High sensitivity photodetectors based on PbS colloidal quantum dots have been demonstrated by several research groups in the last years with performance comparable to commercial III-V semiconductor devices. Nevertheless, investigation of the noise performance of such new photodetectors is still lacking. Here we report on the characterization of PbS colloidal quantum dot near infrared photoconductors including a preliminary analysis of noise power spectra. Devices have been characterized focusing on the low frequency regime (up to 10 kHz) investigating the noise dependence on the voltage bias.