Comments on “A General and Transformable Model Platform for Emerging Multi-Gate MOSFETs”

Giovanni M. Paolucci,Alessandro S. Spinelli,Christian Monzio Compagnoni,Paolo Tessariol

IEEE Electron Device Letters（2017）

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摘要

Hong et al. [1] presented an analytical solution for the electrostatic potential in undoped cylindrical MOSFETs, which was then employed within a well-known Pao-Sah integral to yield the device current. This same analytical solution and drain current calculation were presented in 2016 [2], but such work was not referenced by Hong et al. [1].

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关键词

MOSFET,Semiconductor device modeling,Mathematical model,Electronic mail,Electrostatics,Electric potential,Flash memories

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