Sequential Plasma Activation Methods For Hydrophilic Direct Bonding At Sub-200 Degrees C

We present our newly developed sequential plasma activation methods for hydrophilic direct bonding of silica glasses and thermally grown SiO2 films. N-2 plasma was employed to introduce a metastable oxynitride layer on wafer surfaces for the improvement of bond energy. By using either O-2-plasma/N-2-plasma/N-radical or N-2-plasma/N-radical sequential activation, the quartz-quartz bond energy was increased from 2.7 J/m(2) to close to the quartz bulk fracture energy that was estimated to be around 9.0 J/m(2) after post-bonding annealing at 200 degrees C. The silicon bulklike bond energy between thermal SiO2 films was also obtained. We suggest that the improvement is attributable to surface modification such as N-related defect formation and asperity softening by the N-2 plasma surface treatment. (C) 2018 The Japan Society of Applied Physics