Comprehensive Study Of Ga Activation In Si, Sige And Ge With 5 X 10(-10) Omega.Cm(2) Contact Resistivity Achieved On Ga Doped Ge Using Nanosecond Laser Activation

Ga diffusion and activation in Si, Si0.4Ge0.6 and Ge are studied comprehensively. Optimal Ga activation conditions for Si0.4Ge0.6 and Ge feature a low thermal budget: Ga is highly activated at 400 degrees C in Ge and at 500 degrees C in Si0.4Ge0.6 using a 1min rapid thermal annealing (RTA); the activation is further boosted using short-duration high-temperature nanosecond laser activation (NLA). A low Ti/p-Ge contact resistivity (rho(c)) of 1.2x10(-9) Omega.cm(2) is approached using Ga doping and 400 degrees C RTA activation, while a record-low rho(c) for p-Ge down to 5 x 10(-10) Omega.cm(2) is achieved using NLA for Ga activation.