Characteristics of carbon‑nickel nanocomposite thin films prepared by reactive sputtering under different radio frequency powers and their applications for electronic devices
Thin Solid Films(2018)
摘要
The carbon‑nickel nanocomposite thin films (C-Ni films) were deposited on n-type silicon (n-Si) wafers using reactive sputtering from a pure nickel target in methane/argon sputtering gas. Six kinds of C-Ni films were prepared with the rf power being 50, 100, 150, 200, 250, and 300 W, and the effect of different rf powers on the characteristics of C-Ni films is studied. The measured results show that the carbon-hydrogen bonds in C-Ni films decrease with increasing the rf power from 50 to 100 W, but no carbon‑hydrogen bonds were found in C-Ni films with the rf power above 150 W. When the rf power increases from 50 to 300 W, the Ni/C ratio in C-Ni films increases from 0.2 to 55.8% and the sp2/(sp2 + sp3) carbon ratio in C-Ni films also increases from 40 to 84%. Additionally, the degree of crystallinity of C-Ni films increases with increasing the rf power from 50 to 300 W, and the structure of C-Ni films changes from amorphous carbons to containing an amount of rhombohedral Ni3C compounds. The Ni/C ratio and degree of graphitization of C-Ni films increase with increasing the rf power from 50 to 300 W, so the optical band gap of C-Ni films decreases from 2 to 0 eV and the electrical resistivity of C-Ni films decreases from 3.6 × 104 to 8.6 × 10−5 Ω·m. The current density-voltage behavior displays that the C-Ni/n-Si device has the rectifying characteristic. As the C-Ni film was prepared at the rf power of 150 W, the C-Ni/n-Si device has the best ideality factor of 2.6. One can predict that the C-Ni/n-Si device has the potential to be applied in the electronic/optoelectronic fields.
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关键词
Amorphous carbon,Carbon‑nickel nanocomposite,Microstructure,Optical properties,Electrical properties,Reactive sputtering
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