A DC-75-GHz Bandwidth and 54dBΩ Gain TIA with 10.9 pA√Hz in 130-nm SiGe: C BiCMOS

Iria Garcia Lopez,Pedro Rito,A. Awny,Minsu Ko,Dietmar Kissinger,A. Cagri Ulusoy

IEEE Microwave and Wireless Components Letters（2018）

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摘要

A broadband low-noise amplifier with transimpedance (TI) feedback implemented in a 130-nm SiGe:C BiCMOS technology with fT of 300 GHz is presented. The circuit provides 22-dB gain and 75-GHz bandwidth while dissipating only 95 mW of power, achieving a gain bandwidth against dc power efficiency (GBW/Pdc) of 9.9 GHz/mW. Measured noise figure (NF) is 4 dB until 26.5 GHz, rising up to 6 dB at 70 GHz b...

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关键词

Bandwidth,Noise measurement,Gain,BiCMOS integrated circuits,Integrated circuit modeling,Receivers,Inductors

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