A 500 °C Active Down-Conversion Mixer in Silicon Carbide Bipolar Technology

Muhammad Waqar Hussain,Hossein Elahipanah,John E. Zumbro,Stephan Schroder,Saul Rodriguez,Bengt Gunnar Malm,Homer Alan Mantooth,Ana Rusu

IEEE Electron Device Letters（2018）

引用 14|浏览60

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摘要

This letter presents an active down-conversion mixer for high-temperature communication receivers. The mixer is based on an in-house developed 4H-SiC BJT and down-converts a narrow-band RF input signal centered around 59 MHz to an intermediate frequency of 500 kHz. Measurements show that the mixer operates from room temperature up to 500 °C. The conversion gain is 15 dB at 25 °C, which decreases t...

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关键词

Mixers,Temperature measurement,Silicon carbide,Radio frequency,Semiconductor device measurement,Gain,Degradation

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