Characterization and Modeling of Temperature Effects in 3-D NAND Flash Arrays—Part II: Random Telegraph Noise

This paper investigates the temperature dependence of random telegraph noise (RTN) in 3-D NAND Flash technologies. Experimental results on memory arrays reveal an increase of RTN when temperature is reduced, which is mainly attributed to the growth of the amplitude of the fluctuations arising from RTN traps. A direct proof of this growth is provided by directly monitoring some RTN waveforms arisin...