Preparation of Radial ZnSe-CdS Nano-Heterojunctions Through Atomic Layer Deposition Method and Their Optoelectronic Applications

Radial 1-D nano-heterojunctions have distinct optoelectronic properties. However, their complex fabrication process is still the bottleneck of device applications. Herein, a facile atomic layer deposition (ALD) method was used to coat a polycrystalline CdS thin film with high uniformity and controllable thickness on the surface of the as-synthesized p-type ZnSe nanowires, for fabricating radial 1-D ZnSe-CdS nano-heterojunctions. The nano-heterojunctions exhibited excellent optoelectronic properties. Under blue/violet light, the nano-heterojunctions obtained a response radio of similar to 5 x 10(3), a responsitivity of similar to 1.43 A/W, a gain of similar to 3.78 and a detectivity of similar to 0.57 x 10(12)cmHz(1/2)W(-1) at zero bias. Furthermore, the nano-heterojunction also showed obvious photovoltaic characteristic with a power conversion efficiency of similar to 0.96%. This method is expected to play an important role in nano-heterojunction construction and their device applications. (C) 2018 Elsevier B.V. All rights reserved.